DB HiTek Completes 8-Inch 1,200V SiC MOSFET Reliability Qualification
Seoul – September 12, 2026 -- DB HiTek has completed reliability qualification for its 1,200 V silicon carbide (SiC) MOSFET process on 8-inch (200 mm) wafers, establishing what it calls the world's first complete 8-inch SiC foundry process flow. The South Korean pure-play foundry targets volume production in 2027.
Second-generation PDK clears reliability testing with 2.5 mΩ•cm2 on-resistance
The qualified second-generation process achieves a specific on-resistance (Rsp) of 2.5 mΩ•cm2 or less and a threshold voltage of 3 V or higher at an 18 V on-state gate voltage. DB HiTek is now supplying customers with Process Design Kits (PDKs) for its first- and second-generation 1,200 V SiC MOSFET processes, enabling design, manufacturing, electrical characterization and reliability qualification through a single foundry platform.