DB HiTek Completes Reliability Qualification for 8-Inch SiC MOSFET Process
Seoul – September 12, 2026 -- DB HiTek has completed reliability qualification for its 1200V silicon carbide (SiC) MOSFET process on 8-inch (200mm) wafers, becoming the first foundry to build a complete process chain for 8-inch SiC MOSFET production at this voltage class. The South Korean pure-play foundry plans to launch mass production in 2027, targeting the electric vehicle, renewable energy and industrial power electronics markets.
DB HiTek builds world-first 8-inch SiC foundry process chain
The company developed an end-to-end foundry process covering design, manufacturing, electrical characterization and reliability qualification for 8-inch SiC MOSFET devices rated at 1200V. Most SiC wafer production today runs on 6-inch substrates, but major chipmakers are shifting to 8-inch wafers to cut costs and improve manufacturing efficiency, a transition DB HiTek says it is positioned to capture.