Seoul – September 12, 2026 -- DB HiTek has completed reliability qualification testing for its 1,200V silicon carbide (SiC) MOSFET process on 8-inch (200mm) wafers, establishing what the company calls the world's first full-service process for 8-inch SiC semiconductor production.
DB HiTek targets 2027 mass production launch for 8-inch SiC wafers
The South Korean specialty foundry plans to open the process to existing customers in the third quarter of this year and extend availability to all clients starting in the second quarter of 2027. The move addresses a shift among major global chipmakers from 6-inch to 8-inch SiC wafers to cut production costs and improve manufacturing efficiency, a transition driven by SiC's superior performance over silicon in high-voltage, high-temperature applications used in electric vehicles, renewable energy systems and industrial power equipment.
Second-generation design kit hits 2.5 mOhm/cm2 resistance, already cleared for reliability
DB HiTek is supplying customers with first- and second-generation Process Design Kits (PDKs) for its proprietary 1,200V MOSFET processes. The second-generation process achieves a specific resistance (Rsp) of 2.5 mOhm/cm2 or less and a threshold voltage (Vth) of 3V or higher at an on-state gate voltage (Vgs(on)) of 18V, and has passed its own reliability qualification. Company data show these PDKs can cut initial development resource requirements and shorten product development time by more than one year through faster prototyping.
Third-generation process under qualification, targets tighter 2.3 mOhm/cm2 spec
A third-generation process, scheduled for PDK release in November, is currently undergoing qualification testing. It targets a specific resistance of 2.3 mOhm/cm2 or less at the same 18V gate voltage, alongside a short-circuit withstand time (SCWT) of at least 2.5 microseconds within the short-circuit safe operating area (SCSOA). DB HiTek will release the third-generation PDK to customers once testing concludes.
"Completing reliability qualification for our 1,200V SiC MOSFET process confirms we have secured the core technology and manufacturing foundation needed to deliver the world's first 8-inch SiC semiconductor service," a DB HiTek representative said. The company said it will continue preparing for 2027 mass production of 8-inch SiC wafers to strengthen its position in the next-generation power semiconductor sector.