DB HiTek

Seoul – September 12, 2026 -- DB HiTek has completed reliability qualification for its 1,200V silicon carbide (SiC) MOSFET manufacturing process on 8-inch (200mm) wafers, establishing what the company calls the world's first complete 8-inch SiC foundry process. Mass production is scheduled for 2027.

DB HiTek builds the industry's first full-scale 8-inch SiC foundry pipeline

The South Korean foundry, which specializes exclusively in 8-inch wafer production, has set up an end-to-end service covering design, fabrication, electrical characterization, and reliability qualification for high-power SiC MOSFETs. Most SiC production today runs on 6-inch wafers, but major chipmakers are shifting toward 8-inch substrates to cut per-unit costs and boost manufacturing efficiency, a transition DB HiTek is positioning itself to capture early.

Seoul – September 12, 2026 -- DB HiTek has completed reliability qualification for its 1,200 V silicon carbide (SiC) MOSFET process on 8-inch (200 mm) wafers, establishing what it calls the world's first complete 8-inch SiC foundry process flow. The South Korean pure-play foundry targets volume production in 2027.

Second-generation PDK clears reliability testing with 2.5 mΩ•cm2 on-resistance

The qualified second-generation process achieves a specific on-resistance (Rsp) of 2.5 mΩ•cm2 or less and a threshold voltage of 3 V or higher at an 18 V on-state gate voltage. DB HiTek is now supplying customers with Process Design Kits (PDKs) for its first- and second-generation 1,200 V SiC MOSFET processes, enabling design, manufacturing, electrical characterization and reliability qualification through a single foundry platform.

Seoul – September 12, 2026 -- DB HiTek has completed reliability qualification for its 8-inch (200mm) 1,200V silicon carbide (SiC) MOSFET manufacturing process, establishing what the company calls the world's first complete foundry production flow for 8-inch SiC power semiconductors. Mass production is targeted for 2027.

Seoul – September 12, 2026 -- DB HiTek has completed reliability qualification testing for its 1,200V silicon carbide (SiC) MOSFET process on 8-inch (200mm) wafers, establishing what the company calls the world's first full-service process for 8-inch SiC semiconductor production.

DB HiTek targets 2027 mass production launch for 8-inch SiC wafers

The South Korean specialty foundry plans to open the process to existing customers in the third quarter of this year and extend availability to all clients starting in the second quarter of 2027. The move addresses a shift among major global chipmakers from 6-inch to 8-inch SiC wafers to cut production costs and improve manufacturing efficiency, a transition driven by SiC's superior performance over silicon in high-voltage, high-temperature applications used in electric vehicles, renewable energy systems and industrial power equipment.

Seoul – September 12, 2026 -- DB HiTek has completed reliability qualification for its 1200V silicon carbide (SiC) MOSFET process on 8-inch (200mm) wafers, becoming the first foundry to build a complete process chain for 8-inch SiC MOSFET production at this voltage class. The South Korean pure-play foundry plans to launch mass production in 2027, targeting the electric vehicle, renewable energy and industrial power electronics markets.

DB HiTek builds world-first 8-inch SiC foundry process chain

The company developed an end-to-end foundry process covering design, manufacturing, electrical characterization and reliability qualification for 8-inch SiC MOSFET devices rated at 1200V. Most SiC wafer production today runs on 6-inch substrates, but major chipmakers are shifting to 8-inch wafers to cut costs and improve manufacturing efficiency, a transition DB HiTek says it is positioned to capture.