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Axcelis to Showcase SiC Implantation Tech at ICSCRM 2026 in Japan

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Axcelis to Showcase SiC Implantation Tech at ICSCRM 2026 in Japan

Beverly, Mass. – September 21, 2026 -- Axcelis Technologies (NASDAQ: ACLS) will exhibit at the 23rd International Conference on Silicon Carbide and Related Materials (ICSCRM 2026), targeting a silicon carbide device market Yole Group projects to reach $11 billion by 2031, expanding at a 20% compound annual growth rate from 2025 to 2031.

Axcelis stakes booth space and four technical papers at Yokohama power device forum

The ion implantation supplier will host Booth #F3 at Pacifico Yokohama North from September 28 through October 2, 2026. Company technologists and collaborators will present four papers covering stacking fault suppression in SiC epitaxial layers via substrate implantation, n-type 4H-SiC contact engineering through implantation-annealing co-optimization, manufacturability of single epi step 1200V SiC superjunction pillars using channeling ion implantation, and the sensitivity of SiC superjunction MOSFET performance to high-energy p-pillar implantation.

Purion Power Series+ platform anchors company's pitch to power device manufacturers

President and CEO Dr. Russell Low positioned ion implantation as one of the most critical steps in silicon carbide device manufacturing, citing the company's Purion Power Series+ platform as delivering differentiated capabilities and advanced process control for the sector. Low described the ICSCRM conference as one of the premier technology forums for the power device market.

The four presentations focus on manufacturing challenges specific to high-voltage SiC devices, including 1200V superjunction MOSFETs, a segment increasingly relevant to electric vehicle and industrial power electronics supply chains.

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